http://dx.doi.org/10.1021/nl502703z">
 

Document Type

Journal Article

Department/Unit

Department of Physics

Title

Interaction Range of P-Dopants in Si[110] Nanowires: Determining the Nondegenerate Limit

Language

English

Abstract

© 2014 American Chemical Society.It is well known that the activation energy of dopants in semiconducting nanomaterials is higher than in bulk materials owing to dielectric mismatch and quantum confinement. This quenches the number of free charge carriers in nanomaterials. Though higher doping concentration can compensate for this effect, there is no clear criterion on what the doping concentration should be. Using P-doped Si[110] nanowires as the prototypical system, we address this issue by establishing a doping limit by first-principles electronic structure calculations. We examine how the doped nanowires respond to charging using an effective capacitance approach. As the nanowire gets thinner, the interaction range of the P dopants shortens and the doping concentration can increase concurrently. Hence, heavier doping can remain nondegenerate for thin nanowires.

Keywords

capacitance, Doping, first-principles electronic structure calculation, nanowire

Publication Date

2014

Source Publication Title

Nano Letters

Volume

14

Issue

11

Start Page

6306

End Page

6313

Publisher

American Chemical Society

ISSN (print)

15306984

ISSN (electronic)

15306992

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