Department of Physics
The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs
We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.
Source Publication Title
Journal Of The Electrochemical Society
Link to Publisher's Edition
Chen, X. Y., A. M C Ng, F. Fang, A. B. Djurišić, W. K. Chan, H. L. Tam, K. W. Cheah, P. W K Fong, H. F. Lui, and C. Surya. "The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs." Journal Of The Electrochemical Society 157.3 (2010): H308-H311.