http://dx.doi.org/10.1063/1.3140962">
 

Document Type

Journal Article

Department/Unit

Department of Physics

Title

Effect of annealing on the performance of CrO3/ZnO light emitting diodes

Language

English

Abstract

Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.

Publication Date

2009

Source Publication Title

Applied Physics Letters

Volume

94

Issue

20

Publisher

American Institute of Physics

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