Document Type

Journal Article

Department/Unit

Department of Mathematics

Title

Effects of interdiffusion-induced strain in Ga0.51In0.49P-GaAs intermixed quantum wells

Language

English

Abstract

The effects of interdiffusion and strain introduced by interdiffusion in lattice-matched GaInP-GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Group-III only and dominant group-III interdiffusion produce a large strain build up at the interface, with compressive strain in the well, and tensile strain in the barrier. In the case of group-III only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a double- welled bottom, and a potential buildup in the barrier near the interface. Group-V only and group-V dominant interdiffusion again cause a large strain buildup at the interface, with tensile strain in the well and compressive strain in the barrier. Degeneracy of the heavy-hole and light-hole ground states can be achieved, and the electron-light-hole ground state transition energy can also become the effective bandgap energy of the intermixed structure. The model results are consistent with reported experimental results, and show that the effects of the interdiffusion-induced strain on the carrier confinement profiles can be of interest for various quantum-well device applications in this material system, including intersubband infrared photodetectors, polarization-insensitive electroabsorption modulators, and lasers.

Keywords

Ga 0.51 In 0.49 P-GaAs, Quantum-well intermixing, Strain

Publication Date

1998

Source Publication Title

IEEE Journal of Selected Topics in Quantum Electronics

Volume

4

Issue

4

Start Page

675

End Page

684

Publisher

Institute of Electrical and Electronics Engineers

DOI

10.1109/2944.720479

Link to Publisher's Edition

http://dx.doi.org/10.1109/2944.720479

ISSN (print)

1077260X

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