Document Type

Journal Article

Department/Unit

Department of Physics

Language

English

Abstract

Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

Keywords

Organic phototransistor, Near-infrared detector, D-A polymer, Photoresponsivity

Publication Date

9-30-2017

Source Publication Title

Organic Electronics

Volume

48

Start Page

12

End Page

18

Publisher

Elsevier

Peer Reviewed

1

Copyright

© 2017 Elsevier B.V. All rights reserved.

Funder

This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12303114), Hong Kong Baptist University Faculty Research Grant (FRG2/15-16/072) and Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04). Y.L. Lei also acknowledges the financial support from National Natural Science Foundation of China (Grant No. 11204247).

DOI

https://doi.org/10.1016/j.orgel.2017.05.029

ISSN (print)

15661199

ISSN (electronic)

18785530

Available for download on Thursday, January 10, 2019

Included in

Physics Commons

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