Document Type

Journal Article

Department/Unit

Department of Mathematics

Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum wellstructures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

Publication Year

2000

Journal Title

Journal of Applied Physics

Volume number

88

Issue number

6

Publisher

American Institute of Physics

First Page (page number)

3418

Last Page (page number)

3425

Referreed

1

DOI

10.1063/1.1285840

ISSN (print)

10897550

Link to Publisher’s Edition

http://scitation.aip.org/content/aip/journal/jap/88/6/10.1063/1.1285840

Included in

Mathematics Commons

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