Department of Physics
The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs
We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.
Source Publication Title
Journal Of The Electrochemical Society
Link to Publisher's Edition
Chen, X., Ng, A., Fang, F., Djurišić, A., Chan, W., Tam, H., Cheah, K., Fong, P., Lui, H., & Surya, C. (2010). The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs. Journal Of The Electrochemical Society, 157 (3), H308-H311. https://doi.org/10.1149/1.3282743