Department of Physics
Effect of annealing on the performance of CrO3/ZnO light emitting diodes
Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.
Source Publication Title
Applied Physics Letters
American Institute of Physics
Link to Publisher's Edition
Xi, Y. Y., A. M C Ng, Y. F. Hsu, A. B. Djurišić, B. Q. Huang, L. Ge, X. Y. Chen, W. K. Chan, H. L. Tam, and K. W. Cheah. "Effect of annealing on the performance of CrO3/ZnO light emitting diodes." Applied Physics Letters 94.20 (2009).