Document Type

Journal Article

Department/Unit

Department of Physics

Title

Advances in solution-processable near-infrared phototransistors

Language

English

Abstract

Solution processable near infrared (NIR) photodetectors provide a promising alternative due to their low cost, flexible design, adaptability to various fabrications, and large area manufacturability, removed the limitations of traditional wafer-based inorganic semiconductor techniques. There are two typical solution-processable NIR photodetectors: photodiodes (PDs) and phototransistors (PTs). PDs have a stack of functional layers sandwiched between an anode and a cathode. The external quantum efficiency (EQE) of the NIR PDs cannot be higher than 100%. In comparison, NIR PTs are three-terminal devices with an ultra-low noise current, providing high-sensitivity and tunable gain with an EQE in excess of 100%, achieved by controlling unbalanced charge transport through an optically controlled gate terminal. This review provides a brief introduction with regarding to the device configuration and operation mechanism of the PTs, following with a comprehensive overview on the recent advances in solution processable NIR PTs. This includes different approaches for attaining high-sensitivity NIR PTs using single component, heterojunction and nano-structured channel layers. The advances in solution-processable NIR PTs with novel device design knowledge and new materials processing technology are highlighted. The applications of high sensitivity NIR PTs in visualizing NIR light, health and safety monitoring are also discussed.

Publication Date

2019

Source Publication Title

Journal of Materials Chemistry C

Publisher

Royal Society of Chemistry

DOI

10.1039/C8TC06078A

Link to Publisher's Edition

http://dx.doi.org/10.1039/C8TC06078A

ISSN (print)

20507526

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