Department of Physics; Institute of Advanced Material
Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel
The high performing ultra violet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are enabled by incorporating a bi-layer methylammonium lead triiodide (MAPbI3) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI3/DPP-DTT channel takes the advantages of (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI3/DPP-DTT channel PTs, in the presence of different sources of UV, visible and NIR light, were analyzed. The bi-layer MAPbI3/DPP-DTT channel PTs possess simultaneously a specific detectivity (D*) of >109 Jones over the UV to visible light wavelength range and a high D* of >107 Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing the persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for attaining high performance UV to NIR light broadband PTs.
Source Publication Title
Journal of Materials Chemistry C
Royal Society of Chemistry
Link to Publisher's Edition
Li, N., Li, Y., Chan, W., & Zhu, F. (2019). Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel. Journal of Materials Chemistry C. https://doi.org/10.1039/C8TC06229C