Document Type

Journal Article

Department/Unit

Department of Mathematics

Language

English

Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum wellstructures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

Publication Date

2000

Source Publication Title

Journal of Applied Physics

Volume

88

Issue

6

Start Page

3418

End Page

3425

Publisher

American Institute of Physics

Peer Reviewed

1

DOI

10.1063/1.1285840

Link to Publisher's Edition

http://scitation.aip.org/content/aip/journal/jap/88/6/10.1063/1.1285840

ISSN (print)

10897550

Included in

Mathematics Commons

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